Moshe,

The SIS work was presented by imec and was for conventional lithography, not DSA. I suppose that shrinkage can be reduced by increasing the number of deposition cycles, but there will also be a throughput hit in dong so. I’m not sure what the other consequences might be, and how much the shrinkage could be reduced.

Chris

I’m interested in context of the SIS study shown. Would it happen to be from Paul Nealey’s talk, because if so that might have been some of my image analysis in which case I’d be happy to hear more of your critiques. SIS is a common technique for BCP DSA, because the SIS selectively infiltrates the hydrophilic block (PMMA in the conventional scheme, P2VP in high chi systems) allowing for pattern transfer.

In any case, the line shrinkage, if truly an issue, can be overcome simply by additional cycles. SIS is essentially a subset of ALD techniques where the precursors have a strong interactions with the material being deposited into. Fun fact apparently ALD can also sensitize PMMA resist for optical use.