; Orange programmer module v1.13  for Orange4/5
; (c) 2004-2011 CnCLab
; Hynix NAND Flash Memory - 3 bytes address.

; CHIP=HY27US08281,16384K(512),hy27us08561.HP4
; VCC=3250
; CHIP=HY27US08561,32768K(512),hy27us08561.HP4
; VCC=3250

; primary tested HY27US08561A,HY27US08281
; page read and write
; Read block 512, Erase block 16K

INFO="NAND FLASH Adapter"
SOCKET=0
ALLPINS=48
CDELAY=0
OPTIONS=f

;Input pins:
PINI=P0,0,29
PINI=P1,1,30
PINI=P2,2,31
PINI=P3,3,32
PINI=P4,4,41
PINI=P5,5,42
PINI=P6,6,43
PINI=P7,7,44

;Output pins:
PINO=CLE,8,16	;	Command Latch Enable
PINO=ALE,9,17	;	Address Latch Enable
PINO=CE,10,9	;	Chip Enable
PINO=RDE,11,8	;	Read Enable
PINO=WE,12,18	;	Write Enable

BUSO=DATAO,0
BUSI=DATAI,0

;Power pins:
PINO=Vcc,254,23	;           +5V
PINO=Vcc,254,44	;           +5V
PINO=GND,255,40	;           GND
PINO=Vss,255,1	;           GND
PINO=Vss,255,22	;           GND


BUSO=PULLUP,255
R10=ADDRESS,H
;R11=BLOCK,H
R12=Erase,L,"Cancel,Block (8K),All chip"

[!SETUP]
R10=0  ;block address for erase
;R11=0


[INIT]
DATAO=0xFF
CE=1,RDE=1,WE=1
;WP=0
ALE=0
CLE=0
PULLUP=1
R0=DATAI
P=100

RDE=1,CE=0,CLE=1,ALE=0
DATAO=90h		;cmd readid
WE=N
ALE=1,CLE=0
DATAO=0			;ADR A0-A7
WE=N
DATAO=Z ; HiZ state
ALE=0,P=15
RDE=0,P=15
R0=DATAI   ;
RDE=1
CE=1
R0?!0xAD{PRINT=A("Chip answer error [%02XH]\nContinue?",R0) ;check samsung id
RA?0{EXIT}
}


;[_RDB]
;R0[0]=P0,R0[1]=P1,R0[2]=P2,R0[3]=P3,
;R0[4]=P4,R0[5]=P5,R0[6]=P6,R0[7]=P7


[_SENDADR]
CLE=0,ALE=1
R0=ADR,DATAO=R0			;ADR A0-A7
WE=N

R0=/$BLOCKSIZE,DATAO=R0		;ADR A9-A16
WE=N

R0=/256,DATAO=R0		;ADR A17-A24... page0-1
WE=N

ALE=0

[_CMD]
ALE=0
CLE=1
DATAO=R0		;cmd
WE=N
CLE=0


[_RDSTAT]
RDE=1,CE=0
_CMD(70h)			;cmd
ALE=1
DATAO=Z ; HiZ state
R0=DATAI
P=15
ALE=0,RDE=0
P=15
R0=DATAI
RDE=1
CE=1

;[_WAITWR]
;LOOP(1000){
;_RDSTAT
;
;}

[_READ]
RDE=1,CE=0
R0=ADR
R0=/256
R0=&1

_CMD			;cmd rd 00/01
_SENDADR
;_CMD(0x30)		;cmd rd2
DATAO=Z ; HiZ state
R0=DATAI
P=15
ALE=0,RDE=0
R0=DATAI
DATA=R0
RDE=1,CE=1

[READBLOCK]
RDE=1,CE=0
_CMD(0x00)	    ;cmd rd
_SENDADR
DATAO=Z,R0=DATAI ; HiZ state

P=15      ;Data Transfer from Cell to Register tR - 10 us max
LOOP($BLOCKSIZE){
RDE=0
DATA=DATAI
RDE=1
ADR=+1
}
CE=1
CE=0
_CMD(0xFF)	;rst
CE=1

[WRITEINIT]
;WP=1
P=50

[WRITEBLOCK]

RDE=1,CE=0
_CMD(0x80)			;cmd
_SENDADR
ALE=0
LOOP($BLOCKSIZE){
R0=DATA
DATAO=R0
WE=N
ADR=+1
}

_CMD(0x10)			;cmd program
;P=500
;CE=1
P=10
;_RDSTAT
;PRINT=S("Status0=%02lX",R0)

CLE=0
LOOP=(0,1000){
_RDSTAT
;PRINT=S("Write Status=%02lX",R0)
R0=&0x40	;busy bit
R0?!0{BREAK}
P=10
}
R0?0{_RDSTAT,PRINT=("Page write error!\nStatus %02lX",R0),EXIT}



[READID]
RDE=1,CE=0,CLE=1,ALE=0
DATAO=90h			;cmd
WE=N
ALE=1,CLE=0
DATAO=0			;ADR A0-A7
WE=N
DATAO=Z ; HiZ state
ALE=0,P=15
RDE=0,P=15
R0=DATAI
RDE=1,P=15
RDE=0,P=15
R1=DATAI
RDE=1
CE=1
PRINT=S("ID=%02lX %02lX",R0,R1)
R0=<<8,R0=|R1

R5=R0
_RDSTAT
PRINT=L("Status=%02lX",R0)
R0=R5


[_ERBLK]
GET=("Block address",R10)
RA?0{EXIT}
;WP=1
;LOOP=(0,127){
RDE=1,CE=0
_CMD(0x60)			;cmd


R0=R10,R0=/$BLOCKSIZE
ALE=1
DATAO=R0		;ADR A9-A16
WE=N

R0=/256
DATAO=R0		        ;ADR A17-A24
WE=N

ALE=0

_CMD(0xD0)			;cmd program
CE=1
P=10000
_RDSTAT,PRINT=S("Block erase status %02lX",R0)
P=300000
;ADR=+4096
;}

; All chip erase
[_ERALL]
;WP=1
R13=$SIZE
;RB?0{RB=512}
R13=/16384 ;erase block size
R11=0
PRINT=P(R11,R13)
PRINT=S("Erase %u blocks...",R13)
LOOP=(R13){

RDE=1,CE=0
_CMD(0x60)			;cmd

ALE=1
R0=R11,R0=*32		;A9 to A12 is ignored.
DATAO=R0		;ADR A9-A16
WE=N

R0=R11
R0=/8
DATAO=R0		        ;ADR A17-A24
WE=N

ALE=0

_CMD(0xD0)			;cmd erase
CE=1
P=5000	;min 3ms

R0=R11,R0=&0x1F,R0?0{
;PRINT=S("Erase %u",R11)
PRINT=P(R11)
}


R11=+1
}
R11=0

["Erase"]
GET=("Erase",R12)
RA?0{EXIT}
R12?0{EXIT}
R12?1{_ERBLK}
R12?2{_ERALL}


[END]
CE=1
ALE=0